參數(shù)資料
型號： GS8662D11BGD-400
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 8M X 9 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù)： 34/34頁
文件大小： 670K
代理商： GS8662D11BGD-400
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
9/34
2011, GSI Technology
GS8662D20/38BD-550/500/450/400/350
GS8662D06/11BD-500/450/400/350
FLXDrive-II Output Driver Impedance Control
HSTL I/O SigmaQuad-II+ SRAMs are supplied with programmable impedance output drivers. The ZQ pin must be connected to
VSS via an external resistor, RQ, to allow the SRAM to monitor and adjust its output driver impedance. The value of RQ must be
5X the value of the desired RAM output impedance. The allowable range of RQ to guarantee impedance matching continuously is
between 175
Ω and 350Ω. Periodic readjustment of the output driver impedance is necessary as the impedance is affected by drifts
in supply voltage and temperature. The SRAM’s output impedance circuitry compensates for drifts in supply voltage and
temperature. A clock cycle counter periodically triggers an impedance evaluation, resets and counts again. Each impedance
evaluation may move the output driver impedance level one step at a time towards the optimum level. The output driver is
implemented with discrete binary weighted impedance steps.
Input Termination Impedance Control
These SigmaQuad-II+ SRAMs are supplied with programmable input termination on Data (D), Byte Write (BW), and Clock (K/K)
input receivers. Input termination can be enabled or disabled via the ODT pin (6R). When the ODT pin is tied Low (or left
floating —the pin has a small pull-down resistor), input termination is disabled. When the ODT pin is tied High, input termination
is enabled. Termination impedance is programmed via the same RQ resistor (connected between the ZQ pin and VSS) used to
program output driver impedance, and is nominally RQ*0.6 Thevenin-equivalent when RQ is between 175
Ω and 250Ω. Periodic
readjustment of the termination impedance occurs to compensate for drifts in supply voltage and temperature, in the same manner
as for driver impedance (see above).
Note:
When ODT = 1, Data (D), Byte Write (BW), and Clock (K, K) input termination is always enabled. Consequently, D, BW, K, K
inputs should always be driven High or Low; they should never be tri-stated (i.e., in a High-Z state). If the inputs are tri-stated, the
input termination will pull the signal to VDDQ/2 (i.e., to the switch point of the diff-amp receiver), which could cause the receiver
to enter a meta-stable state and prevent the SRAM from operating within specification.
Example x18 RAM Write Sequence using Byte Write Enables
Data In Sample Time
BW0
BW1
D0–D8
D9–D17
Beat 1
0
1
Data In
Don’t Care
Beat 2
1
0
Don’t Care
Data In
Beat 3
0
Data In
Beat 4
1
0
Don’t Care
Data In
Resulting Write Operation
Byte 1
D0–D8
Byte 2
D9–D17
Byte 1
D0–D8
Byte 2
D9–D17
Byte 1
D0–D8
Byte 2
D9–D17
Byte 1
D0–D8
Byte 2
D9–D17
Written
Unchanged
Written
Unchanged
Written
Beat 1
Beat 2
Beat 3
Beat 4
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