參數(shù)資料
型號(hào)： GS8662D11BGD-400
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 8M X 9 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 11/34頁(yè)
文件大?。?/td> 670K
代理商： GS8662D11BGD-400
Operating Currents (x8/x9)
Parameter
Symbol
Test Conditions
-500
-450
-400
-350
Notes
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
Operating
Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
890
900
820
830
735
745
695
705
2, 3
Operating
Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
890
900
820
830
735
745
695
705
2, 3
Standby
Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V
or
≥ VDD – 0.2 V
270
280
260
270
245
255
240
250
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
19/34
2011, GSI Technology
GS8662D20/38BD-550/500/450/400/350
GS8662D06/11BD-500/450/400/350
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