參數(shù)資料
型號: GS8180S09
廠商: GSI TECHNOLOGY
英文描述: 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
中文描述: 2MB的x 9Bit分離I / O西格瑪?shù)腄DR SRAM的(2米× 9位獨(dú)立的I / O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
文件頁數(shù): 5/32頁
文件大?。?/td> 853K
代理商: GS8180S09
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5/32
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8180S09/18/36B-333/300/275/250
Pin Description Table
Pin Location
A3, A5, A7, A9, B5, B7,
U4, U6, U8, V3, V4, V5,
V6, V7, V8, V9, W5, W7
C7
C5, C8
K3
K1
K11
K2
K10
Symbol
Description
Type
Comments
A
Address
Input
(all versions)
A
A
Address
Address
Clock
Echo Clock
Echo Clock
Echo Clock
Echo Clock
Data I/O
Chip Enable
Chip Enable
Input
Input
Input
Output
Output
Output
Output
Input/Output
Input
Input
Input
Input
Input
Input
Output
Input
Input
Input
Input
Input
Input
(x09 and x18 versions)
(x09 version only)
Active High
Active High
Active High (x18 and x36 versions)
Active Low
Active Low (x18 and x36 versions)
Active Low
Programmable Active High or Low
Active Low
Active High
Active High
Active Low (all versions)
Active Low (x18 and x36 versions)
Active Low (x36 version only)
CK
CQ
CQ
CQ
CQ
DQ
E1
C6
A4, A8
G6, H6
E2 & E3
EP2 & EP3
G
TCK
TDI
TDO
TMS
M2, M3 & M4
MCH
MCL
MCL
MCL
Chip Enable Program Pin
Asynchronous Output Enable
Test Clock
Test Data In
Test Data Out
Test Mode Select
Mode Control Pins
Must Connect High
Must Connect Low
Must Connect Low
Must Connect Low
W9
W4
W8
W3
L6, M6, J6
N6
A6, D6, K6, P6, T6, W6
B3, C9
B8, C4
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