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參數(shù)資料
| 型號： | GS8160V18AGT-150IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 489K |
| 代理商： | GS8160V18AGT-150IT |
Rev: 1.00a 6/2003
16/24
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8160V18/32/36AT-350/333/300/250/200/150
Preliminary
Operating
Cu
rrents
Notes:
1.
I DD
and
I DDQ
apply
to
any
combination
of
V
DD3
,V
DD2
,V
DDQ3
,and
V
DD
Q
2operation.
2.
All
parameters
listed
are
worst
case
scenario.
Parameter
Test
Conditio
ns
M
ode
Symbol
-350
-333
-300
-250
-20
0
-15
0
Unit
0
to
70
°C
–40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–40
to
85
°C
Operat
in
g
Current
De
vi
ce
Sel
ect
ed
;
All
othe
rinputs
≥V
IH
or
≤
V
IL
Output
open
(x32
/
x3
6)
Pi
pe
line
I DD
I DDQ
40
0
55
410
55
380
50
390
50
345
45
355
45
290
40
300
40
240
30
250
30
190
20
200
20
mA
Fl
ow
Through
I DD
I DDQ
27
0
35
280
35
255
30
265
30
240
30
250
30
220
20
230
20
190
15
200
15
175
15
185
15
mA
(x18
)
Pi
pe
line
I DD
I DDQ
36
0
35
370
35
340
30
350
30
310
25
320
25
260
20
270
20
215
15
225
15
170
15
180
15
mA
Fl
ow
Through
I DD
I DDQ
25
0
20
260
20
235
15
245
15
215
15
225
15
200
10
210
10
175
10
185
10
160
10
170
10
mA
St
and
by
Current
ZZ
≥
V
DD
–0.2
V
—
Pi
pe
line
I SB
40
50
40
50
40
50
40
50
40
50
40
50
m
A
Fl
ow
Through
I SB
40
50
40
50
40
50
40
50
40
50
40
50
m
A
De
selec
t
Current
D
evi
ce
D
es
ele
ct
ed
;
All
othe
rinputs
≥
V
IH
or
≤V
IL
—
Pi
pe
line
I DD
90
95
90
95
85
90
85
90
75
80
60
65
m
A
Fl
ow
Through
I DD
70
75
70
75
60
65
60
65
50
55
50
55
m
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GS8160V18AT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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