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參數(shù)資料
| 型號： | GS8160V18AGT-150IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大?。?/td> | 489K |
| 代理商： | GS8160V18AGT-150IT |
Rev: 1.00a 6/2003
11/24
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8160V18/32/36AT-350/333/300/250/200/150
Preliminary
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Simplified State Diagram with G
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
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| GS8160V36BGT-150I | 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| GS8160ZV18AGT-150I | 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| GS8161E36AT-300IT | 512K X 36 CACHE SRAM, 5 ns, PQFP100 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160V18AT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V18AT-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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