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參數(shù)資料
| 型號(hào)： | GS8160E36GT-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 CACHE SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大小： | 647K |
| 代理商： | GS8160E36GT-250 |
GS8160E18/32/36T-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.13 11/2004
13/25
1999, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
025
70
°C2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160E36T-133 | 制造商:GSI 功能描述: 制造商:GSI Technology 功能描述: |
| GS8160E36T-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160E36T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160E36T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160E36T-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Sync Burst SRAMs |
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