參數(shù)資料
型號: GS816037T-133I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 36 CACHE SRAM, 3.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 9/29頁
文件大?。?/td> 901K
代理商: GS816037T-133I
Rev: 1.00 3/2002
12/24
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37T-250/225/200/166/150/133
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
0.3
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
0.3
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
0.3
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
0.3
0.3*VDD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
相關(guān)PDF資料
PDF描述
GS8160E18AT-300 1M X 18 CACHE SRAM, 5 ns, PQFP100
GS8160V18AGT-150IT 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
GS8160V36BGT-150I 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
GS8160ZV18AGT-150I 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
GS8161E36AT-300IT 512K X 36 CACHE SRAM, 5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8160E18BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays