- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299161 > GS8150V36AB-300IT (GSI TECHNOLOGY) 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8150V36AB-300IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 885K |
| 代理商： | GS8150V36AB-300IT |
GS8150V18/36AB-357/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 9/2008
14/25
2003, GSI Technology
ZZ Timing
Note:
K is not shown; assumes K tied to VREF or out of phase with K
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output
drivers are powered by VDDQ.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected.
Read A1
Read A2
Deselect
Clock is a Don't care during Sleep ModeRead A1
Read A2
Read A3
KHQX
KHQV
ZZE
KHQX1
ZZR
tKHWX
tWVKH
tKHEX
tEVKH
tKHAX
tAVKH
KLKH
KHKL
KHKH
A1
A2
A1
A2
A3
Q1
Q2
Q1
Begin ISB
K
A
SS
SW
SWx
ZZ
DQn
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816032T-250T | 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| GS816036BGT-300 | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
| GS816037T-133I | 512K X 36 CACHE SRAM, 3.5 ns, PQFP100 |
| GS8160E18AT-300 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
| GS8160V18AGT-150IT | 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8150V36AB-333 | 制造商:GSI Technology 功能描述:GS8150V36AB-333 - Trays |
| GS8150V36AB-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AB-357 | 制造商:GSI Technology 功能描述:GS8150V36AB-357 - Trays |
| GS8150V36AB-357I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AGB-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。