- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299161 > GS8150V36AB-300IT (GSI TECHNOLOGY) 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8150V36AB-300IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁(yè)數(shù)： | 16/25頁(yè) |
| 文件大?。?/td> | 885K |
| 代理商： | GS8150V36AB-300IT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)
GS8150V18/36AB-357/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 9/2008
23/25
2003, GSI Technology
Ordering Information
Org
Part Number
Type
Speed
(MHz)
TA
1M x 18
GS8150V18AB-357
Register-Register Late Write SRAM
357 MHz
C
1M x 18
GS8150V18AB-333
Register-Register Late Write SRAM
333 MHz
C
1M x 18
GS8150V18AB-300
Register-Register Late Write SRAM
300 MHz
C
1M x 18
GS8150V18AB-250
Register-Register Late Write SRAM
250 MHz
C
512K x 36
GS8150V36AB-357
Register-Register Late Write SRAM
357MHz
C
512K x 36
GS8150V36AB-333
Register-Register Late Write SRAM
333 MHz
C
512K x 36
GS8150V36AB-300
Register-Register Late Write SRAM
300 MHz
C
512K x 36
GS8150V36AB-250
Register-Register Late Write SRAM
250 MHz
C
1M x 18
GS8150V18AB-357I
Register-Register Late Write SRAM
357 MHz
I
1M x 18
GS8150V18AB-333I
Register-Register Late Write SRAM
333 MHz
I
1M x 18
GS8150V18AB-300I
Register-Register Late Write SRAM
300 MHz
I
1M x 18
GS8150V18AB-250I
Register-Register Late Write SRAM
250 MHz
I
512K x 36
GS8150V36AB-357I
Register-Register Late Write SRAM
357 MHz
I
512K x 36
GS8150V36AB-333I
Register-Register Late Write SRAM
333 MHz
I
512K x 36
GS8150V36AB-300I
Register-Register Late Write SRAM
300 MHz
I
512K x 36
GS8150V36AB-250I
Register-Register Late Write SRAM
250 MHz
I
1M x 18
GS8150V18AGB-357
RoHS-compliant Register-Register Late Write SRAM
357 MHz
C
1M x 18
GS8150V18AGB-333
RoHS-compliant Register-Register Late Write SRAM
333 MHz
C
1M x 18
GS8150V18AGB-300
RoHS-compliant Register-Register Late Write SRAM
300 MHz
C
1M x 18
GS8150V18AGB-250
RoHS-compliant Register-Register Late Write SRAM
250 MHz
C
512K x 36
GS8150V36AGB-357
RoHS-compliant Register-Register Late Write SRAM
357MHz
C
512K x 36
GS8150V36AGB-333
RoHS-compliant Register-Register Late Write SRAM
333 MHz
C
512K x 36
GS8150V36AGB-300
RoHS-compliant Register-Register Late Write SRAM
300 MHz
C
512K x 36
GS8150V36AGB-250
RoHS-compliant Register-Register Late Write SRAM
250 MHz
C
1M x 18
GS8150V18AGB-357I
RoHS-compliant Register-Register Late Write SRAM
357 MHz
I
1M x 18
GS8150V18AGB-333I
RoHS-compliant Register-Register Late Write SRAM
333 MHz
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8150V36AB-300T.
2. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816032T-250T | 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| GS816036BGT-300 | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
| GS816037T-133I | 512K X 36 CACHE SRAM, 3.5 ns, PQFP100 |
| GS8160E18AT-300 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
| GS8160V18AGT-150IT | 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8150V36AB-333 | 制造商:GSI Technology 功能描述:GS8150V36AB-333 - Trays |
| GS8150V36AB-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AB-357 | 制造商:GSI Technology 功能描述:GS8150V36AB-357 - Trays |
| GS8150V36AB-357I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AGB-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。