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參數(shù)資料
| 型號(hào)： | GS81302T18E-350T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 8M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁(yè)數(shù)： | 10/36頁(yè) |
| 文件大?。?/td> | 1243K |
| 代理商： | GS81302T18E-350T |
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Operating Currents
Parameter
Symbol
Test Conditions
-375
-350
-333
-300
-250
Notes
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating Current (x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
940
mA
950
mA
895
mA
905
mA
850
mA
860
mA
780
mA
790
mA
670
mA
680
mA
2, 3
Operating Current (x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Operating Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Operating Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Standby Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V or ≥ VDD – 0.2 V
280
mA
290
mA
275
mA
285
mA
270
mA
280
mA
260
mA
270
mA
245
mA
255
mA
2, 4
Notes:
1.
Power measured with output pins floating.
2.
Minimum cycle, IOUT = 0 mA
3.
Operating current is calculated with 50% read cycles and 50% write cycles.
4.
Standby Current is only after all pending read and write burst operations are completed.
GS81302T08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2011
18/36
2011, GSI Technology
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS81302T36GE-333 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 144MBIT 4MX36 0.45NS 165FPBGA - Trays |
| GS81302T36GE-333I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 144MBIT 4MX36 0.45NS 165FPBGA - Trays |
| GS815018AB | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS815018AB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V 18MBIT 1MX18 2NS 119FPBGA - Trays |
| GS815018AB-250I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V 18MBIT 1MX18 2NS 119FPBGA - Trays |
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