參數(shù)資料
型號(hào): GS81302T09E-375T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 16M X 9 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù): 9/36頁(yè)
文件大?。?/td> 1243K
代理商: GS81302T09E-375T
Input and Output Leakage Characteristics
Parameter
Symbol
Test Conditions
Min.
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–2 uA
2 uA
Doff
IILDOFF
VIN = 0 to VDD
–20 uA
2 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDDQ
–2 uA
2 uA
GS81302T08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2011
17/36
2011, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
VOH1
VDDQ/2
VDDQ
V
1, 3
Output Low Voltage
VOL1
Vss
VDDQ/2
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1.
IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2.
IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250
Ω and VDDQ = 1.5 V or 1.8 V
4. 0
Ω ≤ RQ ≤ ∞Ω
5. IOH = –1.0 mA
6. IOL = 1.0 mA
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