- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄173637 > GS81302D37GE-400I (GSI TECHNOLOGY) 4M X 36 DDR SRAM, 0.45 ns, PBGA165 PDF資料下載
參數(shù)資料
| 型號(hào)： | GS81302D37GE-400I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 4M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數(shù)： | 6/33頁 |
| 文件大?。?/td> | 687K |
| 代理商： | GS81302D37GE-400I |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
Preliminary
GS81302D07/10/19/37E-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2010
14/33
2008, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
D Count = 0
DDR Read
D Count = D Count + 1
Write NOP
Load New
Write Address
D Count = 0
DDR Write
D Count = D Count + 1
WRITE
READ
D Count = 2
WRITE
D Count = 2
READ
WRITE
Always
READ
D Count = 2
Notes:
1. Internal burst counter is fixed as 2-bit linear (i.e., when first address is A0+0, next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
READ
D Count = 1
Always
Increment
Read Address
WRITE
D Count = 2
Increment
Write Address
WRITE
D Count = 1
Always
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS81302D10E-300I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T09E-375T | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T18E-350T | 8M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T10E-350I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T110E-450T | 16M X 9 DDR SRAM, 0.37 ns, PBGA165 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS81302DT06GE-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS81302Q36E-250I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 144MBIT 4MX36 0.45NS 165FPBGA - Trays 制造商:GSI Technology, Inc. 功能描述:SRAM Chip Sync Dual 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray |
| GS81302S18E-167 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 144MBIT 8MX18 0.5NS 165FPBGA - Trays |
| GS81302S18E-167I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 144MBIT 8MX18 0.5NS 165FPBGA - Trays |
| GS81302S18E-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 144MBIT 8MX18 0.45NS 165FPBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。