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參數(shù)資料
| 型號： | GS81302D08E-333 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 16M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 7/34頁 |
| 文件大?。?/td> | 536K |
| 代理商： | GS81302D08E-333 |
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Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VREF
Voltage in VREF Pins
–0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
GS81302D08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2011
15/34
2011, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
—
VDD
V
Reference Voltage
VREF
0.68
—
0.95
V
Note:
The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The power
down sequence must be the reverse. VDDQ must not exceed VDD. For more information, read AN1021 SigmaQuad and SigmaDDR Power-Up.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
0
25
85
°C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
°C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
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PDF描述 |
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| GS81302D37GE-400I | 4M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302D10E-300I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T09E-375T | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T18E-350T | 8M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T10E-350I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS81302D10E-300 | 制造商:GSI Technology 功能描述:GS81302D10E-300 - Trays |
| GS81302D10E-333 | 制造商:GSI Technology 功能描述:GS81302D10E-333 - Trays |
| GS81302D10E-333I | 制造商:GSI Technology 功能描述:GS81302D10E-333I - Trays |
| GS81302D10E-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS81302D10E-375 | 制造商:GSI Technology 功能描述:GS81302D10E-375 - Trays |
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