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參數(shù)資料
| 型號： | GS81302D08E-333 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 16M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 14/34頁 |
| 文件大?。?/td> | 536K |
| 代理商： | GS81302D08E-333 |
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GS81302D08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2011
21/34
2011, GSI Technology
Hold Times
Address Input Hold Time
tKHAX
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
1
Control Input Hold Time (R, W)
tKHIX
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
2
Control Input Hold Time (BWX), (BWX)
tKHIX
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
3
Data Input Hold Time
tKHDX
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
Notes:
1.
All Address inputs must meet the specified setup and hold times for all latching clock edges.
2.
Control signals are R, W
3.
Control signals are BW0, BW1, and (NW0, NW1 for x8) and (BW2, BW3 for x36).
4.
If C, C are tied high, K, K become the references for C, C timing parameters
5.
To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN
parameter that is worst case at totally different test conditions (0°C, 1.9 V) than tCHQZ, which is a MAX parameter (worst case at 70°C, 1.7 V). It is not possible for two
SRAMs on the same board to be at such different voltages and temperatures.
6.
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
7.
VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable.
8.
Echo clock is very tightly controlled to data valid/data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guard
bands and test setup variations.
AC Electrical Characteristics (Continued)
Parameter
Symbol
-375
-350
-333
-300
-250
Units
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
相關PDF資料 |
PDF描述 |
|---|---|
| GS81302D37GE-400I | 4M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302D10E-300I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T09E-375T | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T18E-350T | 8M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| GS81302T10E-350I | 16M X 9 DDR SRAM, 0.45 ns, PBGA165 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS81302D10E-300 | 制造商:GSI Technology 功能描述:GS81302D10E-300 - Trays |
| GS81302D10E-333 | 制造商:GSI Technology 功能描述:GS81302D10E-333 - Trays |
| GS81302D10E-333I | 制造商:GSI Technology 功能描述:GS81302D10E-333I - Trays |
| GS81302D10E-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS81302D10E-375 | 制造商:GSI Technology 功能描述:GS81302D10E-375 - Trays |
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