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參數(shù)資料
| 型號： | FPD1000V |
| 英文描述： | CAP,SMD,TANT,22UF,20%,6.3V,A |
| 中文描述： | 1W的功率PHEMT器件 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 197K |
| 代理商： | FPD1000V |
PRELIMINARY
FPD1000V
1W
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
4/29/05
Email:
sales@filcsi.com
Drain-Source Voltage:
Quiescent Current:
RECOMMENDED OPERATING BIAS CONDITIONS
From 5V to 10V
From 25% I
DSS
to 55% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Min
-40
Max
12
-3
I
DSS
+20/-20
575
175
150
7.0
Units
V
V
mA
mA
mW
oC
oC
W
Gain Compression
Simultaneous Combination of Limits
3
1
T
Ambient
= 22
°
C unless otherwise noted
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Under any bias conditions
5
dB
2 or more Max. Limits
80
%
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°
C:
P
TOT
= 7.0W – (0.046W/
°
C) x T
HS
where T
HS
= heatsink or ambient temperature above 22
°
C
Example: For a 85
°
C heatsink temperature: P
TOT
= 7.0W – (0.046 x (85 – 22)) = 4.1W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290
°
C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage
temperature should be 250-260
°
C.
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