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參數(shù)資料
| 型號： | FPD2000AS |
| 英文描述： | 2W PACKAGED POWER PHEMT |
| 中文描述： | 2W的包裝的功率PHEMT器件 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 281K |
| 代理商： | FPD2000AS |
PRELIMINARY
FPD2000AS
2W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filcs.com
Revised:
05/03/04
Email:
sales@filcsi.com
PERFORMANCE (1.8 GHz)
33 dBm Output Power (P
1dB
)
14 dB Power Gain (G
1dB
)
46 dBm Output IP3
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Design Data Available on Website
Usable Gain to 4GHz
DESCRIPTION AND APPLICATIONS
The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Γ
S
and
Γ
L
tuned for Optimum IP3
Power Gain at dB Gain Compression
G
1dB
P
1dB
V
DS
= 10V; I
DS
= 350 mA
32
33
dBm
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 350 mA
P
IN
= 0dBm, 50
system
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
P
OUT
= 22 dBm (single-tone level)
12.5
14.0
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
MSG
20
dB
PAE
45
%
IP3
-47
-44
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 4 mA
I
GS
= 4 mA
I
GD
= 4 mA
See Note on following page
975
1150
1800
1325
mA
mA
Transconductance
Gate-Source Leakage Current
1200
35
mS
μ
A
V
V
V
°
C/W
85
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
14
20
0.9
16
22
1.4
Thermal Resistivity (channel-to-case)
20
SEE PACKAGE OUTLINE FOR
MARKING CODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FPD2000V | 2W POWER PHEMT |
| FPD200P70 | HI-FREQUENCY PACKAGED PHEMT |
| FPD200 | 22 UF 10% 16V (CASE C;6032) TANT C CAP |
| FPD2250DFN | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
| FPD2250 | 1.5W POWER PHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD2000AS_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:2W PACKAGED POWER PHEMT |
| FPD2000AS-EB | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:2W PACKAGED POWER PHEMT |
| FPD2000V | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:2W POWER PHEMT |
| FPD200P70 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:HIGH FREQUENCY PACKAGED PHEMT |
| FPD200P70_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:HIGH FREQUENCY PACKAGED PHEMT |
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