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參數(shù)資料
| 型號(hào)： | FPD200 |
| 英文描述： | 22 UF 10% 16V (CASE C;6032) TANT C CAP |
| 中文描述： | 一般用途PHEMT器件 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 190K |
| 代理商： | FPD200 |
PRELIMINARY
FPD200P70
H
I
-F
REQUENCY
P
ACKAGED P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtrionic.co.uk/semis
Revised:
7/15/05
Email:
sales@filcsi.com
PERFORMANCE
20 dBm Output Power (P
1dB
)
21 dB Power Gain (G
1dB
) at 1.85 GHz
0.7 dB Noise Figure at 1.85 GHz
30 dBm Output IP3
50% Power-Added Efficiency at 1.85 GHz
Useable Gain to 26 GHz
Evaluation Boards Available
GATE LEAD IS ANGLED
DESCRIPTION AND APPLICATIONS
The
FPD
200P70 is a packaged
depletion mode
AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
μ
m x 200
μ
m Schottky barrier
G
ate, defined by
high-resolution stepper-based
photolithography.
.
The
FPD
200P70
is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 26 GHz.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL (except as noted)
Power at 1dB Gain Compression
P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
Gain at 1dB Gain Compression
SSG
V
DS
= 5 V; I
DS
= 50% I
DSS
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
Symbol
Test Conditions
Min
Typ
Max
Units
20
21
45
dBm
dB
%
P
OUT
= P
1dB
Maximum Stable Gain (S
21
/S
12
)
f
= 12 GHz
f
= 18 GHz
Noise Figure
Output Third-Order Intercept Point
P
OUT
= 9 dBm SCL
MSG
V
DS
= 5 V; I
DS
= 50% I
DSS
15
11
0.7
30
NF
IP3
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
θ
JC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.2 mA
I
GS
= 0.2 mA
I
GD
= 0.2 mA
V
DS
> 3V
45
60
120
75
mA
mA
Transconductance
Gate-Source Leakage Current
80
1
mS
μ
A
V
V
V
°
C/W
10
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
0.7
12
14.5
0.9
14
16
325
1.3
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