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參數(shù)資料
| 型號： | FPD3000 |
| 英文描述： | 2W POWER PHEMT |
| 中文描述： | 2W的功率PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 182K |
| 代理商： | FPD3000 |
FPD3000P100
2W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Released:
6/27/05
Email:
sales@filcsi.com
FEATURES
32.5 dBm Linear Output Power
17 dB Power Gain at 2 GHz
9.5 dB Maximum Stable Gain at 10 GHz
42 dBm Output IP3
45% Power-Added Efficiency at 2 GHz
DESCRIPTION AND APPLICATIONS
The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25
μ
m by 3000
μ
m Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have been optimized for
reliable high-power applications. The FPD3000P100 also features Si
3
N
4
passivation and is also
available in die form and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT
f
= 2 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 8 V; I
DS
= 50% I
DSS
Power Gain at P
1dB
G
1dB
V
DS
= 8 V; I
DS
= 50% I
DSS
Maximum Stable Gain (S
21
/S
12
)
SSG
V
DS
= 8 V; I
DS
= 50% I
DSS
31.0
16.5
20.5
8.5
32.5
17.0
21.5
9.5
45
dBm
dB
dB
dB
%
f
= 2 GHz
f
= 10 GHz
Power-Added Efficiency
PAE
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 8V; I
DS
= 50% I
DSS
Matched for optimal power
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
IP3
42
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGD
|
θ
JC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 3 mA
I
GD
= 3 mA
V
DS
> 6V
750
930
1.5
1110
mA
A
Transconductance
Gate-Source Leakage Current
800
2
mS
μ
A
V
V
°
C/W
20
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
0.7
14.5
1.0
16.0
1.3
Thermal Resistivity (see Notes)
24
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD3000_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:2W POWER PHEMT |
| FPD3000-000 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:2W POWER pHEMT |
| FPD3000-000S3 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:2W POWER pHEMT |
| FPD3000-000SQ | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:2W POWER pHEMT |
| FPD3000P100 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:2W PACKAGED POWER PHEMT |
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