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參數(shù)資料
| 型號： | FPD4000V |
| 英文描述： | CAP TANT 7343 PKG 33UF 10%10V |
| 中文描述： | 4瓦功率PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 243K |
| 代理商： | FPD4000V |
PRELIMINARY
FPD4000V
4W
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
6/22/05
Email:
sales@filcsi.com
36.5 dBm Linear Output Power
11 dB Power Gain
Useable Gain to 9 GHz
47 dBm Output IP3
19 dB Maximum Stable Gain
45% Power-Added Efficiency
10V Operation / Plated Source Thru-Vias
PERFORMANCE (1.8 GHz)
The FPD4000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD4000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
DESCRIPTION AND APPLICATIONS
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 10V; I
DS
= 720 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 720 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 720 mA
P
IN
= 0dBm, 50
system
V
DS
= 10V; I
DS
= 750 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 720 mA
P
OUT
= 25.5 dBm (single-tone level)
35.5
36.5
dBm
Power Gain at dB Gain Compression
G
1dB
10.0
11.0
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
Γ
S
and
Γ
L
tuned for Optimum IP3
MSG
19
dB
PAE
45
%
IM3
-46
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 8 mA
I
GS
= 8 mA
I
GD
= 8 mA
See Note on following page
1.9
2.3
3.6
2.65
A
A
Transconductance
Gate-Source Leakage Current
2.4
70
S
μ
A
V
V
V
170
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
6
20
0.9
8
22
1.4
Thermal Resistivity
10
°
C/W
GATE
BOND
PAD (4X)
DIE SIZE (
μ
m): 650 x 1300
DIE THICKNESS: 100
μ
m
BONDING PADS (
μ
m):
>
70 x 65
DRAIN
BOND
PAD (4X)
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