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參數(shù)資料
| 型號： | FPD750DFN |
| 英文描述： | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
| 中文描述： | 低噪聲，高線性包裝的PHEMTT |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 244K |
| 代理商： | FPD750DFN |
FPD750DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
PERFORMANCE (1850 MHz)
24 dBm Output Power (P
1dB
)
20 dB Small-Signal Gain (SSG)
0.3 dB Noise Figure at 25% Bias
39 dBm Output IP3 at 50% Bias
45% Power-Added Efficiency
Evaluation Boards Available
Featuring Lead Free Finish Package
DESCRIPTION AND APPLICATIONS
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
μ
m x 750
μ
m Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD750DFN is available in die form and in
other packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
Small-Signal Gain
SSG
Power-Added Efficiency
PAE
Symbol
Test Conditions
Min
Typ
Max
Units
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
Matched for optimal power
Matched for best IP3
22.5
19
24
20
45
dBm
dB
%
Noise Figure
NF
0.7
0.3
37
39
1.1
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
IP3
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.75 mA
I
GS
= 0.75 mA
I
GD
= 0.75 mA
180
230
375
280
mA
mA
Transconductance
Gate-Source Leakage Current
200
1
mS
μ
A
V
V
V
15
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
12
12
1.0
16
16
1.3
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
11/14/05
Email:
sales@filcsi.com
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|---|---|
| FPD750DFN_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750P100 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:0.5W PACKAGED POWER PHEMT |
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| FPD750SOT343_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750SOT343CE | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
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