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參數(shù)資料
| 型號(hào)： | FPD6836SOT343 |
| 英文描述： | LOW NOISE, HIGH LINEARITY PACKAGED PHEMT |
| 中文描述： | 低噪聲，高線性包裝的PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 191K |
| 代理商： | FPD6836SOT343 |
PRELIMINARY
FPD6836P70
H
I
-F
REQUENCY
P
ACKAGED P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
7/15/05
Email:
sales@filcsi.com
PERFORMANCE
22 dBm Output Power (P
1dB
)
19 dB Power Gain (G
1dB
) at 1.85 GHz
0.5 dB Noise Figure at 1.85 GHz
32 dBm Output IP3
50% Power-Added Efficiency at 1.85 GHz
Useable Gain to 20 GHz
Evaluation Boards Available
GATE LEAD IS ANGLED
DESCRIPTION AND APPLICATIONS
The
FPD
6836P70 is a packaged
depletion mode
AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
μ
m x 360
μ
m Schottky barrier
G
ate, defined by
high-resolution stepper-based
photolithography.
.
The
FPD
6836
is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 22 GHz.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL (except as noted)
Power at 1dB Gain Compression
P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
Gain at 1dB Gain Compression
SSG
V
DS
= 5 V; I
DS
= 50% I
DSS
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
Symbol
Test Conditions
Min
Typ
Max
Units
22
19
45
dBm
dB
%
P
OUT
= P
1dB
Maximum Stable Gain (S
21
/S
12
)
f
= 12 GHz
f
= 18 GHz
Noise Figure
Output Third-Order Intercept Point
P
OUT
= 11 dBm SCL
MSG
V
DS
= 5 V; I
DS
= 50% I
DSS
13
11
0.5
32
NF
IP3
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
θ
JC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.2 mA
I
GS
= 0.2 mA
I
GD
= 0.2 mA
V
DS
> 3V
85
105
215
125
mA
mA
Transconductance
Gate-Source Leakage Current
140
1
mS
μ
A
V
V
V
°
C/W
10
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
0.7
12
14.5
0.9
14
16
275
1.3
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