參數(shù)資料
型號(hào): FPD2000AS
英文描述: 2W PACKAGED POWER PHEMT
中文描述: 2W的包裝的功率PHEMT器件
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 281K
代理商: FPD2000AS
PRELIMINARY
FPD2000AS
2W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filcs.com
Revised:
05/03/04
Email:
sales@filcsi.com
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD2000AS.
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 1.43
for the recommended 200mA operating point. This
approach will require a DC Source resistor capable of at least 200mW dissipation.
The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
PACKAGE OUTLINE
(dimensions in millimeters – mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f
1ZD
P2F
f
= Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
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