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參數(shù)資料
| 型號： | FPD2000V |
| 英文描述： | 2W POWER PHEMT |
| 中文描述： | 2W的功率PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 510K |
| 代理商： | FPD2000V |
PRELIMINARY
FPD2000V
2W
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
4/29/05
Email:
sales@filcsi.com
33 dBm Linear Output Power
14.5 dB Power Gain
Useable Gain to 10 GHz
44 dBm Output IP3
20 dB Maximum Stable Gain
45% Power-Added Efficiency
10V Operation / Plated Source Thru-Vias
PERFORMANCE (1.8 GHz)
The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
DESCRIPTION AND APPLICATIONS
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 350mA
P
IN
= 0dBm, 50
system
V
DS
= 10V; I
DS
= 350 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 350 mA
P
OUT
= 22 dBm (single-tone level)
32
33
dBm
Power Gain at dB Gain Compression
G
1dB
13.0
14.5
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
Γ
S
and
Γ
L
tuned for Optimum IP3
MSG
20
dB
PAE
45
%
IM3
-46
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 4 mA
I
GS
= 4 mA
I
GD
= 4 mA
See Note on following page
975
1150 1375
1800
mA
mA
Transconductance
Gate-Source Leakage Current
1200
35
mS
μ
A
V
V
V
85
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
6
20
0.9
8
22
1.4
Thermal Resistivity
18
°
C/W
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
DIE SIZE (
μ
m): 650 x 800
DIE THICKNESS: 75
μ
m
BONDING PADS (
μ
m):
>
70 x 70
相關PDF資料 |
PDF描述 |
|---|---|
| FPD200P70 | HI-FREQUENCY PACKAGED PHEMT |
| FPD200 | 22 UF 10% 16V (CASE C;6032) TANT C CAP |
| FPD2250DFN | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
| FPD2250 | 1.5W POWER PHEMT |
| FPD3000P100 | 2W PACKAGED POWER PHEMT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FPD200P70 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:HIGH FREQUENCY PACKAGED PHEMT |
| FPD200P70_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:HIGH FREQUENCY PACKAGED PHEMT |
| FPD2080 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| FPD212 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| FPD2120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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