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參數(shù)資料
| 型號： | FPD1000V |
| 英文描述： | CAP,SMD,TANT,22UF,20%,6.3V,A |
| 中文描述： | 1W的功率PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 197K |
| 代理商： | FPD1000V |
PRELIMINARY
FPD1000V
1W
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
4/29/05
Email:
sales@filcsi.com
31 dBm Linear Output Power
16 dB Power Gain
Useable Gain to 10 GHz
41 dBm Output IP3
Maximum Stable Gain of 20 dB
50% Power-Added Efficiency
10V Operation / Plated Source Thru-Vias
FEATURES (1.8 GHz)
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
DESCRIPTION AND APPLICATIONS
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
RF SPECIFICATIONS MEASURED AT
f
= 1.85 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Symbol
Test Conditions
Min
Typ
Max
Units
P
1dB
V
DS
= 10V; I
DS
= 200 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 200 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 200mA
P
IN
= 0dBm, 50
system
V
DS
= 10V; I
DS
= 200 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 200 mA
P
OUT
= 19 dBm (single-tone level)
30
31
dBm
Power Gain at dB Gain Compression
G
1dB
14.5
16.0
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
Γ
S
and
Γ
L
tuned for Optimum IP3
MSG
20
dB
PAE
50
%
IM3
-46
-44
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 2.4 mA
I
GS
= 2.4 mA
I
GD
= 2.4 mA
See Note on following page
480
650
1100
720
mA
mA
Transconductance
Gate-Source Leakage Current
720
20
mS
μ
A
V
V
V
50
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
6
20
0.9
8
22
1.4
Thermal Resistivity
22
°
C/W
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
DIE SIZE (
μ
m): 650 x 800
DIE THICKNESS: 75
μ
m
BONDING PADS (
μ
m):
>
70 x 65
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