參數(shù)資料
型號: FPD10000AF
英文描述: 10W PACKAGED POWER PHEMT
中文描述: 10W的包裝的功率PHEMT器件
文件頁數(shù): 3/3頁
文件大?。?/td> 185K
代理商: FPD10000AF
PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
12/07/04
Email:
sales@filcsi.com
BIASING GUIDELINES
Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended,
requiring a regulated negative voltage supply for depletion-mode devices such as the
FPD10000AF. The Gate bias supply should be capable of sinking / sourcing at least 10mA of
current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage
(typically -0.6 to -1.0V) is applied to the device
before
the Drain voltage, otherwise large
amounts of Drain-Source current will be drawn, potentially leading to instability and self-
oscillation.
The recommended 180 – 300 mA bias point is nominally a Class B/AB mode. A small amount
of RF gain expansion prior to the onset of compression is normal for this operating point, and
significant current drive-up should be expected. If a Class A operation is desired, users should
check the de-rating limits given in the previous section to ensure reliable operation.
PACKAGE OUTLINE
(dimensions in millimeters – mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f
1ZD
P3F
f
= Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
Status: D=Development P = Production
Part Code denotes model (e.g. FPD10000AF)
Part Type: F = FET (pHEMT)
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