參數(shù)資料
型號(hào)： FPD10000AF
英文描述： 10W PACKAGED POWER PHEMT
中文描述： 10W的包裝的功率PHEMT器件
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 185K
代理商： FPD10000AF
PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
12/07/04
Email:
sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
Quiescent Current:
From 10 to 12V
From 180 (Class B) to 300 mA (Class AB) operation
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +15V
For V
DS
> 2V
Forward / Reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Min
-40
Max
16
-3
50% I
DSS
+50/-8
1.75
175
150
42
Units
V
V
mA
mA
W
oC
oC
W
Gain Compression
Simultaneous Combination of Limits
3
1
T
Ambient
= 22
°
C unless otherwise noted
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Under any bias conditions
2 or more Max. Limits
5
80
dB
%
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Notes
:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°
C:
P
TOT
= 42 - (0.286W/
°
C) x T
PACK
where T
PACK
=
source tab lead temperature above 22
°
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
°
C Source flange temperature: P
TOT
= 42 - (0.286 x (55 – 22)) = 32.6W
Note on Thermal Resistivity:
The nominal value of 3.5
°
C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source
flange.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
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