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參數(shù)資料
| 型號(hào)： | FPD10000V |
| 英文描述： | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| 中文描述： | 10W的功率PHEMT器件的WiMAX功率放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 240K |
| 代理商： | FPD10000V |
10W
P
OWER P
HEMT
FOR
W
I
MAX
P
OWER
A
MPLIFIERS
PRELIMINARY
FPD10000V
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http:/
www.filtronic.co.uk/semis
Revised:
8/5/05
Email:
sales@filcsi.com
(802.16-2004 WiMAX Modulation)
30 dBm Output Power, < 2.5% EVM
9.5 dB Power Gain
Class AB Efficiency 10% (10V / 1A I
DQ
)
Class B Efficiency 18% (8V / 300 mA I
DQ
)
39 dBm CW Output Power
> 48 dBm 3
rd
Order Intercept Point
Plated Source Vias – No Source wirebonds needed
2.5 and 3.5 GHz Evaluation boards available (packaged device)
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
The device can be biased from Class C (I
DQ
< 200 mA), to Class A (I
DQ
= 1.0 – 1.5 A) to deliver
optimal linear power over the desired output power range. The FPD10000V is also available in
packaged form.
PERFORMANCE (3.5 GHz)
DESCRIPTION AND APPLICATIONS
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
RF SPECIFICATIONS MEASURED AT
f
= 3.5 GHz
P
1dB
V
DS
= 10V; I
DQ
= 1.0 A
Γ
S
and
Γ
L
tuned for Optimum IP3
G
1dB
V
DS
= 10V; I
DQ
= 1.0 A
Power at 1dB Gain Compression
CW Single Tone
39.5
dBm
Power Gain at dB Gain Compression
CW Single Tone
Channel Power with 802.16-2004
2.5% max. EVM
Class AB Mode
Class AB Mode
V
DS
= 10 V; I
DQ
= 1.0 A
Class B Mode
V
DS
= 8 V; I
DQ
= 350 mA typ.
Class AB Mode
Class B Mode
9.5
dB
P
CH
31.0
31.5
dBm
Channel Power with 802.16-2004
2.5% max. EVM
P
CH
29.5
30
dBm
Power-Added Efficiency
802.16-2004 modulation
Eff
10
20
%
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
GSO
|V
P
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 19 mA
I
GD
= 19 mA
See Note on following page
5.2
3
1.1
35
A
mA
V
V
°
C/W
30
Thermal Resistivity
3.5
GATE
BOND PAD
(16X)
DIE SIZE (
μ
m): 3750 x 750
DIE THICKNESS: 50
μ
m
BONDING PADS (
μ
m):
>
70 x 60
SEE BONDING DIAGRAM BELOW
DRAIN
BOND PAD
(16X)
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