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參數(shù)資料
| 型號： | FMM5823X |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | K-Band Power Amplifier MMIC |
| 中文描述： | K波段單片功率放大器 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 427K |
| 代理商： | FMM5823X |
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DIE ATTACH
1) The die-attach station must have accurate temperature control and an inert forming gas should
be used.
2) Chips should be kept at room temperature except during die-attach.
3) Place package or carrier on the heated stage.
4) Lightly grasp the chip edges by the longer side using tweezers.
Die attach conditions
Stage Temperature : 300 to 310 deg.C
Time : less than 15 seconds
AuSn Preform Volume : per next Figure
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WIRE BONDING
The bonding equipment must be properly grounded. The following or equivalent equipment, tools,
materials, and conditions are recommended.
1) Bonding Equipment and Bonding Tool.
Bonding Equipment : West Bond Model 7400 (Manual Bonder)
Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl)
2) Bonding Wire
Material : Hard or Half hard gold
Diameter : 0.7 to 1.0 mil
3) Bonding Conditions
Method : Thermal Compression Bonding with Ultrasonic Power
Tool Force : 0.196 N ± 0.0196 N
Stage Temperature : 215 deg.C ± 5 deg.C
Tool Heater : None
Ultrasonic Power Transmitter : West Bond Model 1400
Duration : 150 mS/Bond
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Area of Chip Back Surface (mm^2)
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K-Band Power Amplifier MMIC
FMM5823X
FMM5823X
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| FMM6G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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