參數(shù)資料
型號(hào)： FMM5822X
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： K-Band Power Amplifier MMIC
中文描述： K波段單片功率放大器
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 298K
代理商： FMM5822X
K-Band Power Amplifier MMIC
FEATURES
High Output Power; P1dB = 32.5 dBm (Typ.)
High Linear Gain; GL = 22 dB(Typ.)
Frequency Band ; 17.5 - 20.0 GHz
High Linearity ; OIP3 = 41dBm
Impedance Matched Zin/Zout = 50
Edition 2.1
November 2004
1
FMM5822X
DESCRIPTION
The FMM5822X is a power amplifier MMIC that contains a three
stage amplifier, internally matched, for standard communications
band in 17.5 to 20.0GHz frequency range. This product is well
suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Device photo
ABSOLUTE MAXIMUM RATING
Item
Stmbol
VDD
VGG
Pin
Tstg
Condition
Unit
V
V
dBm
Drain-Source Voltage
Gate-Source Voltage
Input Power
Strage Temperature
RECOMMENDED OPERATING CONDITIONS
Item
Drain-Source Voltage
Input Power
Operating Backside Temperature
* : FMM5822X/001 Recommended Drain-Source Voltage VDD
This Product should be hermetically packaged.
Symbol
VDD
Pin
Top
Condition
Unit
V
dBm
8V
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
)
Min.
17.5
30.5
19
-
-38
-
-
-
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
Typ.
-
32.5
21
30
-41
1000
-8
-12
Max.
20
-
25
-
-
1500
-
-
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power Added Efficiency at 1dB G.C.P.
Third Order Intermodulation
Drain Current at 1dB G.C.P.
Input Return Loss at Pin=-20dBm
Output Return Loss at Pin=-20dBm
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
f
VDD=6.0V
IDD(DC)=850mA typ.
Zs=Zl=50ohm
GHz
dBm
dB
%
dBc
mA
dB
dB
P1dB
G1dB
Nadd
IM3*
Iddrf
RLin
RLout
*df=10MHz,Po=20.5dBm
(S.C.L.)
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Unit
Class 0
~ 199V
15
Recommended
7*
Rating
10
-3
25
-55 to +125
Item
Symbol
Limits
-40 to +85
Test Conditions
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