- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369255 > FMC7G10US60 (FAIRCHILD SEMICONDUCTOR CORP) Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency PDF資料下載
參數(shù)資料
| 型號(hào)： | FMC7G10US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-AA, 21 PIN |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 652K |
| 代理商： | FMC7G10US60 |
2001 Fairchild Semiconductor Corporation
FMC7G10US60 Rev. A4
F
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
200
400
600
800
1000
1200
1400
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25
℃
━━
T
C
= 125
℃
------
Ton
Tr
S
Gate Resistance, R
G
[
]
10
100
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
6
8
10
12
14
16
18
20
10
100
Ton
Tr
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
6
8
10
12
14
16
18
20
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 70754 | MICRO FOOT 3x2: 0.5-mm PITCH, 0.165-mm BUMP HEIGHT |
| 7080-02-YO | Network Interface Device |
| 7080-01-BO | Network Interface Device |
| 7080-01-CO | Network Interface Device |
| 7080-01-DO | Network Interface Device |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMC7G15US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC7G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC7G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC7G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC82A2200000 | 功能描述:搖臂開(kāi)關(guān)與扳鈕開(kāi)關(guān) SPDT 6A 250V On-Off-Mom Black RoHS:否 制造商:C&K Components 觸點(diǎn)形式: 開(kāi)關(guān)功能: 電流額定值:50 mA 電壓額定值 AC: 電壓額定值 DC:30 V 功率額定值: 端接類(lèi)型: 執(zhí)行器:Paddle 顏色: 安裝風(fēng)格:Panel 端子密封: 觸點(diǎn)電鍍: 照明:Not Illuminated 照明顏色: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。