參數(shù)資料
型號(hào)： FMC7G10US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
中文描述： 10 A, 600 V, N-CHANNEL IGBT
封裝： 21PM-AA, 21 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 652K
代理商： FMC7G10US60
2001 Fairchild Semiconductor Corporation
FMC7G10US60 Rev. A4
IGBT
F
October 2001
FMC7G10US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
UL Certified No. E209204
Short circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE
(sat) = 2.2 V @ I
C
= 10A
High input impedance
Built in brake and 3 phase rectifier circuit
Fast & soft anti-parallel FWD
Applications
AC & DC motor controls
General purpose inverters
Robotics
Servo controls
Internal Circuit Diagram
R
S
T
P
N
P1
B
GB
GU
EU
-GU
GV
EV
-GV
U
GW
EW
V
-GW
W
E
Package Code : 21PM-AA
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
V
RRM
I
O
Description
FMC7G10US60
600
± 20
10
20
10
20
36
10
1200
10
Units
V
V
A
A
A
A
W
us
V
A
Inverter
&
Brake
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
Converter
I
FSM
100
A
I
2
t
T
J
T
STG
V
ISO
41
A
2
s
°
C
°
C
V
N.m
Common
-40 to +150
-40 to +125
2500
1.25
@ AC 1minute
@ M4
Mounting Torque
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMC7G15US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC7G20US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC7G30US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC7G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC82A2200000 功能描述:搖臂開(kāi)關(guān)與扳鈕開(kāi)關(guān) SPDT 6A 250V On-Off-Mom Black RoHS:否 制造商:C&K Components 觸點(diǎn)形式: 開(kāi)關(guān)功能: 電流額定值:50 mA 電壓額定值 AC: 電壓額定值 DC:30 V 功率額定值: 端接類型: 執(zhí)行器:Paddle 顏色: 安裝風(fēng)格:Panel 端子密封: 觸點(diǎn)電鍍: 照明:Not Illuminated 照明顏色:
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