參數(shù)資料
型號(hào): FMC7G10US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
中文描述: 10 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-AA, 21 PIN
文件頁數(shù): 4/9頁
文件大小: 652K
代理商: FMC7G10US60
2001 Fairchild Semiconductor Corporation
FMC7G10US60 Rev. A4
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
5
10
15
20
25
30
35
40
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
5
10
15
20
25
30
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
20A
10A
I
C
= 5A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
2
4
6
8
10
12
14
16
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 18W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20A
10A
I
C
= 5A
Common Emitter
V
GE
= 15V
C
Case Temperature, T
C
[
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
20A
10A
I
C
= 5A
C
Gate - Emitter Voltage, V
GE
[V]
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