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參數(shù)資料
| 型號(hào)： | FD200R12KE3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Technische Information / technical information |
| 中文描述： | 295 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | FD200R12KE3 |
I
C, nom
I
C
200
295
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
I2t
C
res
V
GE(th)
C
ies
nA
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
400
6,5
-
-
-
5
-
5,0
5,8
nF
nF
14
-
A
DC forward current
+/- 20
7,8
k A2s
t
p
= 1ms
I
FRM
400
A
Grenzlastintegral
I2t value
200
T
c
= 25°C, Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
W
V
T
c
= 25°C
DC collector current
reverse transfer capacitance
Rückwirkungskapazitt
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
T
vj
= 25°C
1200
V
Elektrische Eigenschaften / electrical properties
V
CES
400
-
-
Dauergleichstrom
I
F
I
CES
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
gate threshold voltage
V
GE
= 0V, T
vj
= 25°C, V
CE
= 600V
prepared by: MOD-D2; Mark Münzer
Periodischer Spitzenstrom
repetitive peak forward current
kV
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Technische Information / technical information
FD200R12KE3
IGBT-Module
IGBT-Modules
V
A
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
I
CRM
P
tot
1040
2,5
date of publication: 2002-10-02
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 200A, V
GE
= 15V, T
vj
= 25°C
Kollektor Emitter Reststrom
collector emitter cut off current
I
C
= 200A, V
GE
= 15V, T
vj
= 125°C
Gate Schwellenspannung
I
C
= 8mA, V
CE
= V
GE
, T
vj
= 25°C
V
GES
revision: 3.0
Transistor Wechselrichter / transistor inverter
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
mA
Gateladung
gate charge
V
GE
= -15V...+15V
Q
G
-
1,9
-
μC
0,5
1 (8)
DB_FD200R12KE3_3.0
2002-10-02
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