參數(shù)資料
型號： FD300R12KE3
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： Technische Information / technical information
中文描述： 480 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-5
文件頁數(shù)： 1/9頁
文件大小： 178K
代理商： FD300R12KE3
I
C, nom
I
C
300
480
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
nA
I
GES
gate emitter leakage current
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
reverse transfer capacitance
Rückwirkungskapazitt
5
-
-
400
Gateladung
gate charge
V
GE
= -15V...+15V
collector emitter cut off current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Reststrom
k A2s
kV
6,50
V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
mA
-
μC
nF
nF
C
res
-
0,85
-
600
I
FRM
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
Q
G
19
-
2,80
2,5
300
A
Grenzlastintegral
I2t value
gate threshold voltage
V
GE(th)
I2t
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
DC forward current
gate emitter peak voltage
T
c
= 25°C, Transistor
I
F
600
+/- 20
W
A
1470
V
-
A
I
CRM
P
tot
V
ISOL
Gate Schwellenspannung
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25°C
DC collector current
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Dauergleichstrom
t
p
= 1ms
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
T
c
= 25°C
Kollektor Dauergleichstrom
T
vj
= 25°C
V
Elektrische Eigenschaften / electrical properties
Transistor Wechselrichter / transistor inverter
date of publication: 2002-10-02
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
V
CES
repetitive peak forward current
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Periodischer Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
Technische Information / technical information
FD300R12KE3
IGBT-Module
IGBT-Modules
-
-
V
GES
5,0
5,80
21
C
ies
-
1200
prepared by: MOD-D2; Mark Münzer
revision: 3.0
1 (8)
DB_FD300R12KE3_3.0
2002-10-02
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