參數(shù)資料
型號: EVAL-AD7711EB
廠商: Analog Devices, Inc.
英文描述: CERAMIC CHIP CAPACITOR
中文描述: LC2MOS信號調(diào)理型ADC RTD激勵電流
文件頁數(shù): 4/28頁
文件大?。?/td> 242K
代理商: EVAL-AD7711EB
ORDERING GUIDE
Model
Temperature Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
Evaluation Board
Package Option*
AD7711AN
AD7711AR
AD7711AQ
AD7711SQ
EVAL-AD7711EB
N-24
R-24
Q-24
Q-24
*N = Plastic DIP, Q = Cerdip; R = SOIC.
Parameter
A, S Versions
1
Units
Conditions/Comments
POWER REQUIREMENTS
Power Supply Voltages
AV
DD
Voltage
16
DV
DD
Voltage
17
AV
DD
– V
SS
Voltage
Power Supply Currents
AV
DD
Current
DV
DD
Current
V
SS
Current
Power Supply Rejection
18
Positive Supply (AV
DD
and DV
DD
)
Negative Supply (V
SS
)
Power Dissipation
Normal Mode
+5 to +10
+5
+10.5
V nom
V nom
V max
±
5% for Specified Performance
±
5% for Specified Performance
For Specified Performance
4
4.5
1.5
mA max
mA max
mA max
V
SS
= –5 V
Rejection w.r.t. AGND; Assumes V
BIAS
Is Fixed
See Note 19
90
dB typ
dB typ
45
52.5
15
mW max
mW max
mW max
AV
DD
= DV
DD
= +5 V, V
SS
= 0 V; Typically 25 mW
AV
DD
= DV
DD
= +5V, V
SS
= –5 V; Typically 30 mW
AV
DD
= DV
DD
= +5V, V
SS
= 0 V or –5 V; Typically 7 mW
Standby (Power-Down) Dissipation
NOTES
16
The AD7711 is specified with a 10 MHz clock for AV
DD
voltages of +5 V
±
5%. It is specified with an 8 MHz clock for AV
DD
voltages greater than 5.25 V and less
than 10.5 V.
17
The
±
5% tolerance on the DV
input is allowed provided that DV
does not exceed AV
by more than 0.3 V.
18
Measured at dc and applies in the selected passband. PSRR at 50 Hz will exceed 120 dB with filter notches of 10 Hz, 25 Hz or 50 Hz. PSRR at 60 Hz will exceed
120 dB with filter notches of 10 Hz, 30 Hz or 60 Hz.
19
PSRR depends on gain: Gain of 1 = 70 dB typ; Gain of 2: 75 dB typ; Gain of 4 = 80 dB typ; Gains of 8 to 128 = 85 dB typ. These numbers can be improved (to
95 dB typ) by deriving the V
BIAS
voltage (via Zener diode or reference) from the AV
DD
supply.
Specifications subject to change without notice.
AD7711–SPECIFICATIONS
REF OUT to AGND . . . . . . . . . . . . . . . . . . . . –0.3 V to AV
DD
Digital Input Voltage to DGND . . . . . –0.3 V to AV
DD
+ 0.3 V
Digital Output Voltage to DGND . . . –0.3 V to DV
DD
+ 0.3 V
Operating Temperature Range
Commercial (A Version) . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended (S Version) . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Storage Temperature Range . . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300
°
C
Power Dissipation (Any Package) to +75
°
C . . . . . . . . 450 mW
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of the specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25
°
C, unless otherwise noted)
AV
DD
to DV
DD
. . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +12 V
AV
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +12 V
AV
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +12 V
AV
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +12 V
DV
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
DV
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V
SS
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6 V
V
SS
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6 V
Analog Input Voltage to AGND
. . . . . . . . . . . . . . . . . . . . . . . . . V
SS
– 0.3 V to AV
DD
+ 0.3 V
Reference Input Voltage to AGND
. . . . . . . . . . . . . . . . . . . . . . . . . V
SS
– 0.3 V to AV
DD
+ 0.3 V
REV. F
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. The digital control inputs are diode protected;
however, permanent damage may occur on unconnected devices subject to high energy electro-
static fields. Unused devices must be stored in conductive foam or shunts. The protective foam
should be discharged to the destination socket before devices are inserted.
WARNING!
ESD SENSITIVE DEVICE
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