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參數(shù)資料
| 型號： | ES25P80 |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| 中文描述： | 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口 |
| 文件頁數(shù)： | 19/35頁 |
| 文件大?。?/td> | 450K |
| 代理商： | ES25P80 |
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ESI
19
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all
bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the
device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driv-
ing Chip Select (CS#) Low, followed by the instruc-
tion code, and three address bytes on Serial Data
Input (SI). Any address inside the Sector (see Table
1) is a valid address for the Sector Erase (SE)
instruction. Chip Select (CS#) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in Figure 14.
Chip Select (CS#) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (CS#) is
driven High, the self-timed Sector Erase cycle
(whose duration is t
SE
) is initiated. While the Sector
Erase cycle is in progress, the Status Register may
be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 dur-
ing the self-timed Sector Erase cycle, and is 0 when
it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to any
memory area that is protected by the Block Protect
(BP2, BP1, BP0) bits (see Table 1) is not executed.
0
1
2
3
4
5
6 7
8
9
10
28 29
30
31
Figure 14. Sector Erase (SE) Instruction Sequence
SCK
CS#
SI
MSB
Instruction
24-Bit Address
1
1 0 1 1 0 0 0
23 22 21
2
1
0
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES25P80-75CC2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2Y | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES25P80-75CC2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2Y | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
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