- 您現在的位置：買賣IC網 > PDF目錄364744 > ES25P80 (優(yōu)先(蘇州)半導體有限公司) 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface PDF資料下載
參數資料
| 型號： | ES25P80 |
| 廠商： | 優(yōu)先(蘇州)半導體有限公司 |
| 英文描述： | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| 中文描述： | 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口 |
| 文件頁數： | 16/35頁 |
| 文件大小： | 450K |
| 代理商： | ES25P80 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
ESI
16
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
Read Identification (RDID)
The Read Identification (RDID) instruction allows the
8-bit manufacturer identification to be read, followed
by two bytes of the device identification.
The manufacturer identification byte is assigned by
JEDEC, and has a value of 4Ah for ESI products.
The device identification is assigned by the device
manufacturer, and indicates the memory type in the
first byte (20h), and the memory capacity of the
device in the second byte (14h).
Any Read Identification (RDID) instruction executed
while an Erase, Program, or Write Status Register
cycle is in progress is not decoded, and has no
effect on the cycle that is in progress.
The device is first selected by driving Chip Select
(CS#) Low. Then, the 8-bit instruction code for the
instruction is shifted in, with each bit being latched in
on SI during the rising edge of SCK.
This is followed by the 24-bit device identification,
stored in the memory, being shifted out on Serial
Data Output (SO), with each bit being shifted out
during the falling edge of Serial Clock (SCK).
The instruction sequence is shown in Figure 11.
Driving CS# high after the Device Identification has
been read at least once terminates the READ_ID
instruction. The Read Identification (RDID) instruc-
tion can also be terminated by driving CS# High at
any time during data output. When Chip Select
(CS#) is driven High, the device is put in the Stand-
by Power mode. Once in the Stand-by Power
mode, the device waits to be selected, so that it can
receive, decode and execute instructions
Manufacturer
Identification
Device Identification
Memory Type
Memory Capacity
4Ah
20h
14h
0
1 2 3 4 5
6
7 8 9 10
28 29 30 31 32 33
34 35 36 37
38 39 40
41 42
43 44 45 46 47
Figure 10. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence
SCK
CS#
SI
SO
Data Out 1
MSB
MSB
7
Instruction
High Impedance
24-Bit Address
Data Out 2
Dummy Byte
22 21
23
0 0 0 0 1 0 1 1
2
1
3
0
6
5
7
4
2
1
3
0
6
5
7
4
2
1
3
0
相關PDF資料 |
PDF描述 |
|---|---|
| ES25P80-75CC2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2Y | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ES25P80-75CC2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CC2Y | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75CG2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
發(fā)布緊急采購，3分鐘左右您將得到回復。