參數(shù)資料
型號(hào)： ES25P80-75IG2R
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
中文描述： 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口
文件頁(yè)數(shù)： 28/35頁(yè)
文件大?。?/td> 450K
代理商： ES25P80-75IG2R
ESI
28
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
DC CHARACTERISTICS
This section summarizes the DC and AC Characteristics of the device. Designers should check that the oper-
ating conditions in their circuit match the measurement conditions specified in the Test Specifications in Table
7, when relying on the quoted parameters.
Symbol
Description
Test Conditions
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
2.7
3
3.6
V
I
LI
Input Leakage Current
V
IN
= GND to Vcc
1
uA
I
SB
Standby Current
CS# = Vcc
50
uA
I
DP
Deep Power Down Current
CS# = Vcc
1
10
uA
I
LO
Output Leakage Current
V
IN
= GND to Vcc
1
uA
I
CCI
Active Read Current
SCK = 0.1 Vcc / 0.9 Vcc
SO = Open
40MHz
6
mA
SCK = 0.1Vcc / 0.9 Vcc
SO= Open
75 MHz
12
I
CC2
Active Page Program Current
CS# = Vcc
24
mA
I
CC3
Active WRSR Current
CS# = Vcc
24
mA
I
CC4
Active Sector Erase Current
CS# = Vcc
24
mA
I
CC5
Active Bulk Erase Current
CS# = Vcc
24
mA
V
IL
Input Low Voltage
- 0.3
0.3 Vcc
V
V
IH
Input High Voltage
0.7 Vcc
Vcc + 0.5
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA, Vcc = Vcc min
0.4
V
V
OH
Output High Voltage
I
OH
= -0.1mA,
Vcc - 0.2
V
Notes:
1. Typical values are at T
A
= 25
o
C and Vcc = 3V
Table.6 DC Characteristics
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