參數(shù)資料
型號(hào): ES25P80-75IG2R
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
中文描述: 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口
文件頁(yè)數(shù): 10/35頁(yè)
文件大?。?/td> 450K
代理商: ES25P80-75IG2R
ESI
10
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
Table 3. Instruction Set
Instruction
Description
One-Byte
Instruction Code
Address
Bytes
Dummy
Byte
Data Bytes
Status Register Operations
WREN
Write Enable
06H (0000 0110)
0
0
0
WRDI
Write Disable
04H (0000 0100)
0
0
0
RDSR
Read from Status Register
05H (0000 0101)
0
0
1 to Infinity
WRSR
Write to Status Register
01H (0000 0001)
0
0
1
Read Operations
READ
Read Data Bytes
03H (0000 0011)
3
0
1 to Infinity
FAST_READ
Read Data Bytes at Higher Speed
0BH (0000 1011)
3
1
1 to Infinity
RDID
Read Identification
9FH (1001 1111)
0
0
1 to 3
RDMD
Read Manufacturer and Device ID
90H (1001 0000)
0
3
1 to Infinity
RDPARA
Read Parameter Page
53H (0101 0011)
3
0
1 to Infinity
FRDPARA
Fast Read Parameter Page
5BH (0101 1011)
3
1
1 to Infinity
Erase Operations
SE
Sector Erase
D8H (1101 1000)
3
0
0
BE
Bulk (Chip) Erase
C7H (1100 0111)
0
0
0
PE
Erase Parameter Page
D5H (1101 0101)
0
0
0
Program Operations
PP
Page Program
02H (0000 0010)
3
0
1 to 256
PPP
Program Parameter Page
52H (0101 0010)
3
0
1 to 256
Deep Power Down Savings Mode Operations
DP
Deep Power Down
B9H (1011 1001)
0
0
0
RES
Release from Deep Power Down
ABH (1010 1011)
0
0
0
Release from Deep Power Down and
Read Electronic Signature
ABH (1010 1011)
0
3
1 to Infinity
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