參數(shù)資料
型號: ES25P80-75IG2R
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
中文描述: 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口
文件頁數(shù): 2/35頁
文件大?。?/td> 450K
代理商: ES25P80-75IG2R
ESI
2
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
The ES25P80 device is a 3.0 volt (2.7V to 3.6V)
single power flash memory device. ES25P80 con-
sists of Sixteen sectors, each with 512 Kb memory.
Data appears on SI input pin when inputting data
into the memory and on the SO output pin when
outputting data from the memory. The devices are
designed to be programmed in-system with the
standard system 3.0 volt Vcc supply.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory supports Sector Erase and Bulk Erase
instructions.
Each device requires only a 3.0 volt power supply
(2.7V to 3.6V) for both read and write functions.
Internally generated and regulated voltages are pro-
vided for program operations. This device does not
require Vpp supply.
GENERAL PRODUCT DESCRIPTION
BLOCK DIAGRAM
PS
Logic
IO
DATA PATH
Array - R
Array - L
RD
SRAM
X
C
S
S
S
G
V
W
H
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