參數(shù)資料
型號(hào): ES25P80-75IG2R
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
中文描述: 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口
文件頁(yè)數(shù): 27/35頁(yè)
文件大?。?/td> 450K
代理商: ES25P80-75IG2R
ESI
27
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
Figure 23. Power-Up Timing
Time
Vcc
Vcc
max
Vcc
min
Full Device Access
t
PU
Table 5. Power-Up Timing
Symbol
Parameter
Min.
Max.
Unit
Vcc (min)
Vcc (minimum)
2.7
V
t
PU
Vcc (min) to device operation
10
ms
Initial Delivery State
The device is delivered with all bits set to 1 (each
byte contains FFh). The Status Register contains
00h (all Status Register bits are 0).
Maximum Rating
Stressing the device above the rating listed in the
Absolute Maximum Ratings section below may
cause permanent damage to the device. Theses
are stress ratings only and operation of the device
at these or any other conditions above those indi-
cated in the Operating sections of this specification
is not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings
Ambient Storage Temperature ....
-65
o
C to +150
o
C
Voltage with Respect to Ground
All inputs and I/Os ...........................
- 0.3V to 4.5V
Operating Ranges
Ambient Operating Temperature (T
A
)
Commercial ..........................................
0
o
C to +70
o
C
Industrial
.............................................. -40
o
C to +85
o
C
Positive Power Supply
Voltage Range ...........................................
2.7V to 3.6V
Note
:Operating ranges define those limits between
which the functionality of the device is guaranteed
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