參數(shù)資料
型號(hào)： EBE20RE4AAFA-4A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank)
中文描述： 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝： LEAD FREE, DIMM-240
文件頁(yè)數(shù)： 11/22頁(yè)
文件大?。?/td> 191K
代理商： EBE20RE4AAFA-4A-E
EBE20RE4AAFA
Data Sheet E0440E30 (Ver. 3.0)
11
DC Characteristics 1 (TC = 0
°C
to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs
are STABLE;
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
-5C
-4A
TBD
2210
mA
Operating current
(ACT-READ-PRE)
IDD1
-5C
-4A
TBD
2430
mA
Precharge power-down
standby current
IDD2P
-5C
-4A
TBD
690
mA
Precharge quiet standby
current
IDD2Q
-5C
-4A
TBD
1110
mA
Idle standby current
IDD2N
-5C
-4A
TBD
1290
mA
IDD3P-F
-5C
-4A
TBD
1290
mA
Fast PDN Exit
MRS(12) = 0
Active power-down
standby current
IDD3P-S
-5C
-4A
TBD
840
mA
Slow PDN Exit
MRS(12) = 1
Active standby current
IDD3N
-5C
-4A
TBD
2120
mA
Operating current
(Burst read operating)
IDD4R
-5C
-4A
TBD
3960
mA
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
Operating current
(Burst write operating)
IDD4W
-5C
-4A
TBD
3960
mA
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE20RE4AAFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank)
EBE20RE4ABFA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM
EBE20RE4ABFA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM
EBE20RE4ABFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM
EBE20RE4ABFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM
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