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參數(shù)資料
| 型號(hào)： | EBE20RE4AAFA-4A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank) |
| 中文描述： | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封裝： | LEAD FREE, DIMM-240 |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 191K |
| 代理商： | EBE20RE4AAFA-4A-E |
EBE20RE4AAFA
Data Sheet E0440E30 (Ver. 3.0)
10
Electrical Specifications
All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +2.3
V
1
Supply voltage relative to VSS
VDD
–0.5 to +2.3
V
Short circuit output current
IOS
50
mA
1
Power dissipation
PD
18
W
Operating case temperature
TC
0 to +95
°C
1, 2
Storage temperature
Tstg
–55 to +100
°C
1
Note: 1. DDR2 SDRAM component specification.
2. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands
in frequency to a 32ms period (tREFI = 3.9
μ
s) and higher temperature self-refresh entry via the control
of EMSR (2) bit A7 is required.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TC = 0
°C
to +85°C) (DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
1.7
1.8
1.9
V
4
VSS
0
0
0
V
VDDSPD
1.7
—
3.6
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
1, 2
Termination voltage
VTT
VREF
0.04
VREF
VREF + 0.04
V
3
DC input logic high
VIH (DC)
VREF + 0.125
VDDQ + 0.3V
V
DC input low
VIL (DC)
0.3
VREF – 0.125
V
AC input logic high
VIH (AC)
VREF + 0.250
V
AC input low
VIL (AC)
VREF
0.250
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5
×
VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed
±
2% VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ must be equal to VDD.
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| EBE21RD4AGFA-5C-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBE20RE4AAFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank) |
| EBE20RE4ABFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE20RE4ABFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE20RE4ABFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE20RE4ABFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
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