參數(shù)資料
型號： E28F200B5B60
廠商： INTEL CORP
元件分類： PROM
英文描述： DIRECTIONAL COUPLER, 20DB, SMT
中文描述： 256K X 8 FLASH 5V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 7/44頁
文件大?。?/td> 345K
代理商： E28F200B5B60
E
28F200B5, 28F004/400B5, 28F800B5
15
PRELIMINARY
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH)
Mode
Notes
RP#
CE#
OE#
WE#
A9
A0
VPP
DQ0–15
Read
1,2,3
VIH
VIL
VIH
XXX
DOUT
Output Disable
VIH
VIL
VIH
X
High Z
Standby
VIH
XXXXX
High Z
Deep Power-Down
9
VIL
XXXXXX
High Z
Intelligent Identifier
(Mfr.)
4VIH
VIL
VIH
VID
VIL
X
0089 H
Intelligent Identifier
(Device)
4,5
VIH
VIL
VIH
VID
VIH
X
See Table
5
Write
6,7,8
VIH
VIL
VIH
VIL
XXX
DIN
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL)
Mode
Note
RP#
CE#
OE#
WE#
A9
A0
A–1
VPP
DQ0–7
DQ8–14(10)
Read
1,2,3
VIH
VIL
VIH
XXXX
DOUT
High Z
Output
Disable
VIH
VIL
VIH
XXXX
High Z
Standby
VIH
XX
XXXX
High Z
Deep
Power-
Down
9VIL
XXX
XXXX
High Z
Intelligent
Identifier
(Mfr.)
4VIH
VIL
VIH
VID
VIL
X
89H
High Z
Intelligent
Identifier
(Device)
4,5
VIH
VIL
VIH
VID
VIH
X
See
Table 5
High Z
Write
6,7,8
VIH
VIL
VIH
VIL
XXXX
DIN
High Z
NOTES:
1.
Refer to
DC Characteristics.
2.
X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP.
3.
See
DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.
4.
Manufacturer and device codes may also be accessed via a CUI write sequence, A0 selects, all other addresses = X.
5.
See Table 5 for device IDs.
6.
Refer to Table 7 for valid DIN during a write operation.
7.
Command writes for block erase or program are only executed when VPP = VPPH1 or VPPH2.
8.
To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.3.
9.
RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.
10. This column does not apply to the E28F004B5 since it is a x8-only device.
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