參數(shù)資料
型號(hào)： E28F200B5B60
廠商： INTEL CORP
元件分類： PROM
英文描述： DIRECTIONAL COUPLER, 20DB, SMT
中文描述： 256K X 8 FLASH 5V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 24/44頁
文件大?。?/td> 345K
代理商： E28F200B5B60
28F200B5, 28F004/400B5, 28F800B5
E
30
PRELIMINARY
5.5
DC Characteristics—Automotive Temperature (Continued)
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
ICCR
VCC Read Current for
Word or Byte
1,5,6
55
70
mA
TTL
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
50
70
mA
CMOS
VCC = VCC Max
CE = VIL
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = GND ± 0.2 V
or VCC ± 0.2 V
ICCW
VCC Program Current for
Word or Byte
1,4
25
50
mA
VPP = VPPH1 (at 5 V)
Program in Progress
20
45
mA
VPP = VPPH2 (at 12 V)
Program in Progress
ICCE
VCC Erase Current
1,4
22
45
mA
VPP = VPPH1 (at 5 V)
Block Erase in Progress
18
40
mA
VPP = VPPH2 (at 12 V)
Block Erase in Progress
ICCES
VCC Erase Suspend
Current
1,2
5
12.0
mA
CE# = VIH
Block Erase Suspend
VPP = VPPH1 (at 5 V)
IPPS
VPP Standby Current
1
± 5
± 15
A
VPP ≤ VCC
IPPD
VPP Deep Power-Down
Current
1
0.2
10
A
RP# = GND ± 0.2 V
IPPR
VPP Read Current
1
50
200
A
VPP >VCC
IPPW
VPP Program Current for
Word or Byte
113
30
mA
VPP = VPPH
VPP = VPPH1 (at 5 V)
Program in Progress
825
mA
VPP = VPPH
VPP = VPPH2 (at 12 V)
Program in Progress
相關(guān)PDF資料
PDF描述
E28F200BX-B120 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
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E28F200B5B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
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E28F200BL-T150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
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