參數(shù)資料
型號(hào): DS16EV5110ASQX/NOPB
廠商: National Semiconductor
文件頁(yè)數(shù): 19/24頁(yè)
文件大小: 0K
描述: IC EQUALIZER VIDEO 3D+C 48-LLP
產(chǎn)品培訓(xùn)模塊: Signal Conditioning Applications
標(biāo)準(zhǔn)包裝: 2,500
類型: 視頻均衡器
應(yīng)用: HD 顯示器,DVI/HDMI
安裝類型: 表面貼裝
封裝/外殼: 48-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 48-LLP(7x7)
包裝: 帶卷 (TR)
其它名稱: DS16EV5110ASQX
SNLS301C – JULY 2008 – REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Supply Voltage (VDD)
-0.5V to +4.0V
LVCMOS Input Voltage
-0.5V + 4.0V
LVCMOS Output Voltage
-0.5V to 4.0V
CML Input/Output Voltage
-0.5V to 4.0V
Junction Temperature
+150°C
Storage Temperature
-65°C to +150°C
Lead Temperature (Soldering, 5 sec.)
+260°C
ESD Rating
HBM, 1.5 k
, 100 pF
>6 kV
Thermal Resistance
θJA, No Airflow
30°C/W
(1)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are ensured for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
(2)
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
(1) (2)
Min
Typ
Max
Units
Supply Voltage (VDD to GND)
3.0
3.3
3.6
V
Ambient Temperature
-40
25
+85
°C
(1)
Typical values represent most likely parametric norms at VDD = 3.3V, TA = 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2)
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
(1) (2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LVCMOS DC SPECIFICATIONS
IIH-PU
High Level Input Leakage Current
LVCMOS pins with internal pull-up
-10
+10
μA
resistors
IIH-PD
High Level Input Leakage Current
LVCMOS pins with internal pull-
80
105
μA
down resistors
IIL-PU
Low Level Input Leakage Current
LVCMOS pins with internal pull-up
-20
-10
μA
resistors
IIL-PD
Low Level Input Leakage Current
LVCMOS pins with internal pull-
-10
+10
μA
down resistors
VIH
High Level Input Voltage
2.0
VDD
V
VIL
Low Level Input Voltage
0
0.8
V
VOH
High Level Output Voltage
SD Pin, IOH = -3mA
2.4
V
VOL
Low Level Output Voltage
SD Pin, IOL = 3mA
0.4
V
POWER
PD
Power Dissipation
EN = High, Device Enabled
475
700
mW
EN = Low, Power Down Mode
70
mW
(1)
Typical values represent most likely parametric norms at VDD = 3.3V, TA = 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2)
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
4
Copyright 2008–2013, Texas Instruments Incorporated
Product Folder Links: DS16EV5110A
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