| 型號 | 廠商 | 描述 |
| atc100b470jt500xt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
飛思卡爾半導體(中國)有限公司 | RF Power Field Effect Transistor |
| atc18m 2 3 4 5 6 7 8 |
ATC18M Advance Information [Updated 7/03. 8 Pages] | |
| atc18 2 3 4 5 6 7 8 |
Atmel Corp. | ER 4C 4#4 SKT RECP |
| atc18rha 2 3 4 5 6 7 8 |
Atmel Corp. | Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:32; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:32-1 RoHS Compliant: No |
| atc20 2 3 4 5 6 7 8 9 10 11 |
ATC20 Summary [Updated 9/02. 11 Pages] The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V +/- 10% and memory cells compiled to the precise requirements of the design. It is fully compatible with Atmel＇s extensive range of microcontroller. DSP. memory. standard-interface. analog and application-specific cells. | |
| atc35 2 3 4 5 6 7 8 9 10 11 12 13 14 |
ATC35 Summary [Updated 1/03. 14 Pages] The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V +/- 10% and memory cells compiled to the precise requirements of the design. It is fully compatible with Atmel＇s extensive range of microcontroller. DSP. memory. standard-interface. analog and application-specific cells. | |
| atf-10xxx 2 |
Low Noise Gallium Arsenide FET(低噪聲砷化鎵 FET) | |
| atf-13xxx 2 |
Low Noise Gallium Arsenide FET(低噪聲砷化鎵 FET) | |
| atf-13336-str 2 3 |
2-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13336-tr1 2 3 |
2-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13736-str 2 3 4 |
2-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13736-tr1 2 3 4 |
2-16 GHz Low Noise Gallium Arsenide FET | |
| atf-33143 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SC-70 (SOT-343) Low Noise +33.5 dBm OIP3 | |
| atf-331m4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
PHEMT Low Noise +31 dBm OIP3 in MiniPak | |
| atf-38143 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SC-70 (SOT-343) Low Noise +22 dBm OIP3 | |
| demo-atf-3x1m4a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Demonstration circuit board for ATF-331M4 | |
| atf-531p8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package | |
| atf-531p8-blk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package | |
| atf-531p8-tr1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package | |
| atf-531p8-tr2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package | |
| atf-58143 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-blkg 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-blk 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-tr1 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-tr1g 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-tr2 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf-58143-tr2g 2 3 4 5 6 7 8 9 10 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| atf13284str 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf13284 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf13284tr1 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf13284tr2 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13284 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13284-str 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13284-tr1 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf-13284-tr2 2 |
1-16 GHz Low Noise Gallium Arsenide FET | |
| atf21100 2 3 |
TRANSISTOR | JFET | N-CHANNEL | 80MA I(DSS) | CHIP | |
| atf21170 2 3 |
TRANSISTOR | JFET | N-CHANNEL | 80MA I(DSS) | MICRO-XVAR | |
| atf34143blk 2 3 4 5 6 7 8 9 10 11 12 13 14 |
TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R | |
| atf34143tr1 2 3 4 5 6 7 8 9 10 11 12 13 14 |
TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R | |
| atf34143tr2 2 3 4 5 6 7 8 9 10 11 12 13 14 |
TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R | |
| atf501p8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | |
| atf-501p8-blk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12/-12, Max Output Current(A): ??0.625, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40??C to +75??C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Metal Package, Continuous Auto-Recovery, Single & Dual Ouput Regulated | |
| atf-501p8-tr1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | |
| atf-501p8-tr2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | |
| ath12k12-9 2 |
15Amps | |
| ath12k12-9j 2 |
15Amps | |
| ath12k12-9s 2 |
15Amps | |
| ath12k12-9sj 2 |
15Amps | |
| ath15t033-9 2 |
15Amps | |
| ath15t05-9 2 |
15Amps |