- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364728 > ATF-13736-TR1 2-16 GHz Low Noise Gallium Arsenide FET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-13736-TR1 |
| 英文描述： | 2-16 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 2-16 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | ATF-13736-TR1 |
5-39
2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
36 micro-X Package
Features
Low Noise Figure:
1.8dB Typical at 12GHz
High Associated Gain:
9.0dB Typical at 12GHz
High Output Power:
17.5dB Typical at 12GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available
[1]
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
Parameters and Test Conditions
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f =12.0 GHz
2.2
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA
8.0
P
1 dB
Power Output @ 1 dB Gain Compression:
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
f = 12.0 GHz
dB
8.5
55
50
-1.5
mmho
mA
V
25
40
-4.0
90
-0.5
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
5965-8722E
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-33143 | SC-70 (SOT-343) Low Noise +33.5 dBm OIP3 |
| ATF-331M4 | PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-38143 | SC-70 (SOT-343) Low Noise +22 dBm OIP3 |
| DEMO-ATF-3X1M4A | Demonstration circuit board for ATF-331M4 |
| ATF-531P8 | High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。