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| 型號： | ATF-13xxx |
| 英文描述： | Low Noise Gallium Arsenide FET(低噪聲砷化鎵 FET) |
| 中文描述： | 低噪聲砷化鎵場效應(yīng)管（低噪聲砷化鎵場效應(yīng)管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | ATF-13XXX |
C. Example of Failure Rate Calculation
At 100
°
C with a device operating 8 hours a day, 5 days a week, the percent utilization is:
% Utilization = (8 hours/day) x (5 days/week) / (168 hours/week)
=
25%
Then the point failure rate per year is:
(5 x 10
-10
) x (25%) x (8760 hours/year)
=
1.1 x 10
-6
% per year
Likewise, the 90% confidence level failure rate per year is:
(1 x 10
-9
) x (25%) x (8760 hours/year) = 2.2 x 10
-6
% per year
Notes:
1. The point MTTF is simply the total
device hours divided by the
number of failures.
2. This MTTF and failure rate repre-
sent the performance level for
which there is a 90% probability of
the device doing better than the
stated value. The confidence level
is based on the statistics of failure
distribution. The assumed distribu-
tion is exponential. This particular
distribution is commonly used in
describing useful life failures.
3. FIT is defined as Failure in Time, or
specifically, failures per billion
hours. The relationship between
MTTF and FIT is as follows:
FIT = 10
9
/(MTTF).
3. Flammability Test
(MIL-STD-202, Method 111):
Meets Needle Flame test per UL
Category D (Flaming Time
<3 sec.) under Material
Classification 94VO.
4. DOD-HDBK-1686 ESD
Classification:
Class I
Test Name
MIL-STD-883
Reference
Test Conditions
Units Tested
Units Failed
Thermal Shock
1011
-65
°
C to +150
°
C, 100 cycles
368
0
Temperature
Cycle
1010
-65
°
C to +150
°
C, 100 cycles
368
0
Moisture
Resistance
–
+121
°
C; 100% RH, 96 hrs.
290
0
*Mechanical
Shock
2002
1500 G’s, 0.5 msec. pulse
135
0
*Acceleration
2001
20,00 G’s, one minute all axis
135
0
Solderability
2003
245
°
C, 5 sec. dwell;
245
0
2. Environmental Tests
(*applicable to ceramic packages only)
400
350
300
250
200
150
100
50
25
T
°
C
104
10
5
10
6
10
7
10
9
10
10
MTTF – MEAN TIME TO FAILURE (HRS.)
4.0
3.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
A
10
8
1.2 eV
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies, Inc.
5966-2942E (11/99)
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