- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364728 > ATF-13336-STR 2-16 GHz Low Noise Gallium Arsenide FET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-13336-STR |
| 英文描述： | 2-16 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 2-16 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | ATF-13336-STR |
5-36
2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
36 micro-X Package
Features
Low Noise Figure:
1.4dB Typical at 12GHz
High Associated Gain:
9.0dB Typical at 12GHz
High Output Power:
17.5dBm Typical P
1 dB
at
12GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available
[1]
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
Parameters and Test Conditions
Units Min.
dB
dB
Typ. Max.
1.2
1.4
1.6
11.5
9.0
7.5
17.5
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 12.0 GHz dBm
1.6
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA
dB
dB
dB
8.0
P
1 dB
Power Output @ 1 dB Gain Compression:
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
f = 12.0 GHz
dB
8.5
55
50
-1.5
mmho
mA
V
25
40
-4.0
90
-0.5
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
ATF-13336
Description
The ATF-13336 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective micro-
strip package. Its premium noise
figure makes this device appropri-
ate for use in low noise amplifiers
operating in the 2-16GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8724E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13336-TR1 | 2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-STR | 2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-33143 | SC-70 (SOT-343) Low Noise +33.5 dBm OIP3 |
| ATF-331M4 | PHEMT Low Noise +31 dBm OIP3 in MiniPak |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13336-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。